2. M. Parameswaran and M. Paranjape, "Layout Design Rules for Microstructure
Fabrication Using Commercially Available CMOS Technology",
Sensors and
Materials, Vol. 5, No. 2, 1993.
3. M. Paranjape, Lj. Ristic, and I. Filanovsky, "An Integrated Micromachined
Magnetic Field Sensor with On-Chip Support Circuitry
Using Standard
Technology Processing", Applied Physics Letters,
Vol. 64, No. 12, 1994.
4. Lj. Ristic and M. Paranjape, "Hall Devices for Multidimensional Sensing
of
Magnetic Fields", Sensors and Materials, Vol. 5,
No. 5, 1994.
5. S. Naseh, L. Landsberger, M. Paranjape, M. Kahrizi, “Experimental
Investigations
of Anisotropic Etching of Silicon in TMAH”, Canadian
Journal of Physics, Vol. 74,
pp. 79, 1996.
6. J. Chen, M. Parameswaran, and M. Paranjape, “Piezoresistance Characterization
of CMOS Gate Polysilicon”, Canadian Journal of Physics,
Vol. 74, pp. 151, 1996.
7. L. Landsberger, S. Naseh, M. Kahrizi, and M. Paranjape, “On Hillocks
Generated
During Anisotropic Etching of Silicon in TMAH”,
IEEE Journal of Microelectromechanical
Systems, Vol. 5, No. 2, 1996.
8. M. Paranjape, L. Landsberger, M. Kahrizi, "A CMOS-Compatible 2-D
Vertical Hall
Magnetic Field Sensor Using Active Confinement and
Post-Process Micromachining",
Sensors and Actuators-A, Vol. A53, pp. 278, 1996.
9. L. Landsberger, M. Kahrizi, M. Paranjape, S. Naseh, "Variation of
Underetched Planes
Appearing Bulk Micromachined Silicon Using TMAH
Etchant", Sensors and Materials,
Vol. 9, No. 7, pp. 417-426, 1997.
10. B. Nikpour, S. Naseh, L. Landsberger, M. Kahrizi, M. Paranjape,
R. Antaki,
J. Currie, “Release Control Structures
for Cantilever Based Sensors”, Sensors
and Materials, Vol. 10, No. 5, pp. 287-297,
1998.
11. M. Kahrizi, M. Paranjape and L.M. Landsberger, "Complementary Metal
Oxide
Semiconductor-Compatible Micromachined
Two Dimensional Vertical Hall
Magnetic Field Sensor: A modified design”,
Journal of Vacuum Science
Technology, Vol. A 16(2), pp. 873, 1998.
12. A.Pandy, L.M. Landsberger, B.Nikpour, M. Paranjape and M. Kahrizi,
"Experimental Investigation of High
Si/Al Selectivity During Anisotropic
Etching in Tetra-Methyl Ammonium Hydroxide.
Journal of Vacuum
Science Technology, Vol. A 16(2), pp.
868, 1998.