Transparent conducting films of In2O3-ZrO2, SnO2-ZrO2 and ZnO-ZrO2
|Title||Transparent conducting films of In2O3-ZrO2, SnO2-ZrO2 and ZnO-ZrO2|
|Publication Type||Conference Proceedings|
|Year of Publication||2000|
|Authors||Qadri, S. B., Kim H., Khan H. R., Pique A., Horwitz J. S., Chrisey D., Kim W. J., and Skelton E. F.|
|Conference Name||27th International Conference on Metallurgical Coatings and Thin Films|
|Conference Location||San Diego, California|
The optical transparencies and electrical conductivities of thin films of In2O3, SnO2 and ZnO mixed with ZrO2 have been investigated. These films were deposited on glass substrates at room temperature using pulsed-laser deposition. Indium-zirconium oxide films with a ZrO2 content up to 15 wt.% were conducting and more than 80% transparent from 450-700 nm. As the ZrO2 content increased from 0 to 15 wt.%, the electrical resistivities increased from 1.28 x 10(-3) to 6.48 x 10(-2) Ohm cm; the carrier densities decreased from 2.14 x 10(20) to 1.0 x 10(18) cm(-3): and the Hall mobilities decreased from 21 to 5 cm(2) V-1 s(-1), all monotonically. The electrical resistivities of tin-zirconium oxide increased from 1.65 x 10(-2) to 7.33 x 10(-2) Ohm cm as the ZrO2 content varied between 0 and 5 wt.%, whereas the resistivities of the zinc-zirconium oldde varied from 3 x 10(-2) to 3.5 x 10(-1) Ohm cm for ZrO, contents between 0 and 10 wt.%. (C) 2000 Elsevier Science B.V. All rights reserved.