CRYSTALLIZED AMORPHOUS-SILICON FOR LOW-COST SOLAR-CELLS
| Title | CRYSTALLIZED AMORPHOUS-SILICON FOR LOW-COST SOLAR-CELLS |
| Publication Type | Conference Proceedings |
| Year of Publication | 1990 |
| Authors | Yi, J., Wallace R., Sridhar N., Wang Z., Xie K., Chung D. D. L., Wie C. R., Etemadi K., Anderson W. A., Periard M., Cochrane R. W., Diawara Y., Currie J. F., and Coleman J. |
| Conference Name | 10th Photovoltaic Research and Development Project Review Meeting |
| Pagination | 403-413 |
| Conference Location | Lakewood, Co |
| Abstract | Hydrogenated amorphous silicon (a-Si:H), 1-10-mu-m thick, was deposited onto stainless steel and molybdenum sheets using cathodic d.c. glow discharge in a gradient field and by plasma-enhanced chemical vapor deposition. The films were subsequently crystallized by isothermal heating in N2, rapid thermal processing, isothermal annealing in vacuum (IAV) or isothermal annealing after vycor encapsulation (LAE). All techniques led to crystallization as revealed by X-ray diffraction. Annealing by IAV at 1000-degrees-C for 7 h or LAE at 700-degrees-C for 8 h gave the most intense (111) silicon diffraction peaks. Auger electron spectroscopy showed significant diffusion of iron into the silicon for stainless steel substrates. Energy recoil detection of as-deposited a-Si:H showed good uniformity of both silicon and hydrogen. |