CHARACTERIZATION OF PHOTOVOLTAIC DEVICES WITH HYDROGENATED AMORPHOUS-SILICON
| Title | CHARACTERIZATION OF PHOTOVOLTAIC DEVICES WITH HYDROGENATED AMORPHOUS-SILICON |
| Publication Type | Journal Article |
| Year of Publication | 1991 |
| Authors | Diawara, Y., Currie J. F., Najafi S. I., Brebner J. L., Cochrane R. W., and Gujrathi S. C. |
| Journal | Canadian Journal of Physics |
| Volume | 69 |
| Pagination | 530-537 |
| Abstract | The first part of this paper presents the physicochemical structure of hydrogenated amorphous silicon (a-Si:H) deduced from infrared absorption and elastic recoil detection techniques. The second part indicates the performance of a-Si:H devices: pin photocells have a conversion efficiency of 5.3%. Detectors integrated on planar optical waveguides present a rise time of 1.2 ns and a sensitivity of 98.8 mA W-1. |