We review the application of dynamical mean-field theory to Josephson junctions and study how to maximize the characteristic voltage IcRn which determines the width of a rapid single flux quantum pulse, and thereby the operating speed in digital electronics. We study a wide class of junctions ranging from SNS, SCmS (where Cm stands for correlated metal), SINIS (where the insulating layer is formed from a screened dipole layer), and SNSNS structures. Our review is focused on a survey of the physical results; the formalism has been developed elsewhere.